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| Si1025X Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (min) (V) - 60 RDS(on) () 4 at VGS = - 10 V VGS(th) (V) - 1 to - 3.0 ID (mA) - 500 FEATURES * * * * * * * * Halogen-free Option Available TrenchFET(R) Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 23 pF (typ.) Miniature Package RoHS COMPLIANT * Gate-Source ESD Protected: 2000 V SC-89 S1 1 6 D1 BENEFITS * * * * * * Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer Small Board Area G1 2 5 G2 Marking Code: D D2 3 4 S2 Top View Ordering Information: SI1025X-T1-E3 (Lead (Pb)-free) Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS * Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors etc. * Battery Operated Systems * Power Supply Converter Circuits * Solid State Relays ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Currentb TA = 25 C TA = 85 C TA = 25 C TA = 85 C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD - 450 280 145 - 55 to 150 2000 - 200 - 145 - 650 - 380 250 130 mW C V 5s Steady State - 60 20 - 190 - 135 mA Unit V Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71433 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1025X Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 10 A VDS = VGS, ID = - 0.25 mA VDS = 0 V, VGS = 10 V VDS = 0 V, VGS = 5 V VDS = - 50 V, VGS = 0 V VDS = - 50 V, VGS = 0 V, TJ = 85 C VDS = - 10 V, VGS = - 4.5 V VDS = - 10 V, VGS = - 10 V VGS = - 4.5 V, ID = - 25 mA Drain-Source On-Resistancea RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss tON tOFF VDD = - 25 V, RL = 150 , ID - 165 mA, VGEN = - 10 V, RG = 10 VDS = - 25 V, VGS = 0 V, f = 1 MHz VDS = - 30 V, VGS = - 15 V, ID - 500 mA VGS = - 10 V, ID = - 500 mA VGS = - 10 V, ID = - 500 mA, TJ = 125 C Forward Transconductancea Diode Forward Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb, c Turn-On Time Turn-Off Time 1.7 0.26 0.46 23 10 5 20 35 pF nC Voltagea VDS = - 10 V, ID = - 100 mA IS = - 200 mA, VGS = 0 V 100 - 1.4 - 50 - 600 8 4 6 mS V - 60 -1 - 3.0 200 100 - 25 - 250 mA nA V Symbol Test Conditions Min. Typ. Max. Unit ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1.0 VGS = 10 V 7V 0.8 I D - Drain Current (A) 8V I D - Drain Current (mA) 900 25 C 125 C 600 1200 TJ = - 55 C 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 300 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 71433 S-80643-Rev. B, 24-Mar-08 Si1025X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 20 40 VGS = 0 V 16 R DS(on) - On-Resistance () VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 0 0 5 10 15 20 25 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 15 ID = 500 mA 12 R DS(on) - On-Resistance VDS = 30 V VDS = 48 V 9 1.8 Capacitance V - Gate-to-Source Voltage (V) GS 1.5 VGS = 10 V at 500 mA 1.2 (Normalized) VGS = 4.5 V at 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 1000 VGS = 0 V R DS(on) - On-Resistance () 8 10 On-Resistance vs. Junction Temperature ID = 500 mA I S - Source Current (A) 100 TJ = 125 C 6 4 ID = 200 mA 2 10 TJ = 25 C TJ = - 55 C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71433 S-80643-Rev. B, 24-Mar-08 www.vishay.com 3 Si1025X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 0.5 0.4 ID = 250 A 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Threshold Voltage Variance Over Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71433. www.vishay.com 4 Document Number: 71433 S-80643-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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